Memorias de investigación
Ponencias en congresos:
Modelling of quantum dot solar cells for concentrator PV applications
Año:2011
Áreas de investigación
  • Ingeniería eléctrica, electrónica y automática,
  • Dispositivos electrónicos,
  • Células solares
Datos
Descripción
An equivalent circuit model is applied in order to describe the operation characteristics of quantum dot intermediate band solar cells (QD-IBSCs), which accounts for the recombination paths of the intermediate band (IB) through conduction band (CB), the valence band (VB) through IB, and the VB-CB transition. In this work, fitting of the measured dark J-V curves for QD-IBSCs (QD region being non-doped or direct Si-doped to n-type) and a reference GaAs p-i-n solar cell (no QDs) were carried out using this model in order to extract the diode parameters. The simulation was then performed using the extracted diode parameters to evaluate solar cell characteristics under concentration. In the case of QDSC with Si-doped (hence partially-filled) QDs, a fast recovery of the open-circuit voltage (Voc) was observed in a range of low concentration due to the IB effect. Further, at around 100X concentration, Si-doped QDSC could outperform the reference GaAs p-i-n solar cell if the current source of IB current source were sixteen times to about 10mA/cm2 compared to our present cell.
Internacional
Si
Nombre congreso
37th IEEE Photovoltaic Specialists Conference
Tipo de participación
960
Lugar del congreso
Seattle, EEUU
Revisores
Si
ISBN o ISSN
0160-8371
DOI
10.1109/pvsc.2011.6186491
Fecha inicio congreso
19/06/2011
Fecha fin congreso
24/06/2011
Desde la página
2642
Hasta la página
2645
Título de las actas
Proc. 37th IEEE PVSC
Esta actividad pertenece a memorias de investigación
Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física