Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Depth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin films
Year:2011
Research Areas
  • Engineering
Information
Abstract
The lattice order degree and the strain in as-grown, Mn-implanted and post-implanted annealed InAs thin films were investigated with depth resolution by means of Rutherford backscattering spectrometry in channeling conditions (RBS/C). Three main crystallographic axes were analyzed for both In and As sublattices. The behaviour of the induced defects was evaluated in two regions with different native defects: the interface and the surface. The results show that Mn implantation and post-implantation annealing are anisotropic processes, affecting in a different way the In and As sublattices. The mechanisms influencing the enhancement and deterioration of the crystal quality during the implantation are discussed in relation to the as-grown defects and the segregation of the elements
International
Si
JCR
Si
Title
Nuclear Instruments and Methods in Physics Research B
ISBN
0167-5087
Impact factor JCR
0
Impact info
Volume
269
10.1016/j.nimb.2011.02.004
Journal number
From page
733
To page
738
Month
SIN MES
Ranking
Participants
  • Autor: Raquel Gonzalez Arrabal (UPM)
  • Autor: A. Redondo-Cubero (Centro de Microanálisis de Materiales, UAM)
  • Autor: Y. González (Instituto de Microelectrónica de Madrid CSIC)
  • Autor: L. González (Instituto de Microelectrónica de Madrid CSIC)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Fusión Nuclear Inercial y Tecnología de fusión
  • Centro o Instituto I+D+i: Instituto de Fusión Nuclear
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)