Memorias de investigación
Artículos en revistas:
Depth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin films
Año:2011
Áreas de investigación
  • Ingenierías
Datos
Descripción
The lattice order degree and the strain in as-grown, Mn-implanted and post-implanted annealed InAs thin films were investigated with depth resolution by means of Rutherford backscattering spectrometry in channeling conditions (RBS/C). Three main crystallographic axes were analyzed for both In and As sublattices. The behaviour of the induced defects was evaluated in two regions with different native defects: the interface and the surface. The results show that Mn implantation and post-implantation annealing are anisotropic processes, affecting in a different way the In and As sublattices. The mechanisms influencing the enhancement and deterioration of the crystal quality during the implantation are discussed in relation to the as-grown defects and the segregation of the elements
Internacional
Si
JCR del ISI
Si
Título de la revista
Nuclear Instruments and Methods in Physics Research B
ISSN
0167-5087
Factor de impacto JCR
0
Información de impacto
Volumen
269
DOI
10.1016/j.nimb.2011.02.004
Número de revista
Desde la página
733
Hasta la página
738
Mes
SIN MES
Ranking
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Raquel Gonzalez Arrabal UPM
  • Autor: A. Redondo-Cubero Centro de Microanálisis de Materiales, UAM
  • Autor: Y. González Instituto de Microelectrónica de Madrid CSIC
  • Autor: L. González Instituto de Microelectrónica de Madrid CSIC
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Fusión Nuclear Inercial y Tecnología de fusión
  • Centro o Instituto I+D+i: Instituto de Fusión Nuclear