Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Ta2O5/SiO2 insulating acoustic mirrors for AlN-based X-band BAW resonators
Year:2011
Research Areas
  • Electronic technology and of the communications
Information
Abstract
This work describes the performance of AlN-based bulk acoustic wave resonators built on top of insulating acoustic reflectors and operating at around 8 GHz. The acoustic reflectors are composed of alternate layers of amorphous Ta2O5 and SiO2 deposited at room temperature by pulsed-DC reactive sputtering in Ar/O2 atmospheres. SiO2 layers have a porous structure that provides a low acoustic impedance of only 9.5 MRayl. Ta2O5 films exhibit an acoustic impedance of around 39.5 MRayl that was assessed by the picoseconds acoustic technique These values allow to design acoustic mirrors with transmission coefficients in the centre of the band lower than -40 dB (99.998 % of reflectance) with only seven layers. The resonators were fabricated by depositing a very thin AlN film onto an iridium bottom electrode 180 nm-thick and by using Ir or Mo layers as top electrode. Resonators with effective electromechanical coupling factors of 5.7% and quality factors at the antiresonant frequency around 600 are achieved.
International
Si
Congress
2011 IEEE International Ultrasonics Symposium
960
Place
Orlando, EE. UU.
Reviewers
Si
ISBN/ISSN
1051-0117
10.1109/ULTSYM.2011.0425
Start Date
18/10/2011
End Date
21/10/2011
From page
1704
To page
1707
2011 IEEE International Ultrasonics Symposium Proc.
Participants
  • Autor: José Capilla Osorio (UPM)
  • Autor: Jimena Olivares Roza (UPM)
  • Autor: Marta Clement Lorenzo (UPM)
  • Autor: Jesus Sangrador Garcia (UPM)
  • Autor: Enrique Iborra Grau (UPM)
  • Autor: Valeriy Felmetsger (OEM Group Inc., Gilbert, AZ, U.S.A.)
  • Autor: Arnaud Devos (IEMN Dpt ISEN, UMR CNRS 8520 Lille, France)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Centro o Instituto I+D+i: Centro de Materiales y Dispositivos Avanzados para Tecnologías de Información y Comunicaciones
  • Departamento: Tecnología Electrónica
S2i 2019 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)