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Descripción
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| III-nitride electron devices are attracting considerable attention for future wireless communication and power electronics applications. This seminar will cover a brief overview on the state-of-the-art performance of AlGaN/GaN heterojunction FETs. Focus is on the future perspectives of new III-nitride device structures for improved device performance. | |
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Internacional
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No |
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Nombre congreso
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Seminarios del ISOM |
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Entidad organizadora
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ISOM-DIE-ETSIT-UPM |
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Nacionalidad Entidad
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Sin nacionalidad |
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Lugar/Ciudad de impartición
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ISOM-DIE-ETSIT-UPM |
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Fecha inicio
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14/03/2011 |
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Fecha fin
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14/03/2011 |