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Descripción
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| Due to their large bandgaps, high breakdown voltages and high electron mobility, GaN High Electron Mobility Transistors (HEMTs) display extraordinary device performance making them the leading advance technology for high power RF applications. However the extreme conditions in which GaN HEMTs are operated challenge both the limits of GaN material properties and also challenge our understanding of the nature in which GaN devices can degrade. This presentation covers recent advances made toward observing defects and bandgap states that are associated with the causes of GaN HEMT degradation under both RF and DC stressing. Specifically, the presentation describes how we have taken a materials science defect characterization method known as Deep Level Optical Spectroscopy and adapted it to be useful to characterize defects and their behavior in actual GaN HEMTs that have been stressed in various fashions. Direct relationships are established between specific traps and HEMT degradation mechanisms, for both MBE and MOCVD devices, with different behaviors observed for both growth methods. This information can be used in the future to create accurate, predictive models of failure mechanisms in GaN HEMT technology for both RF and DC operating conditions. | |
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Internacional
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No |
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Nombre congreso
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Seminarios del ISOM |
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Entidad organizadora
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ISOM-DIE-ETSIT-UPM |
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Nacionalidad Entidad
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Sin nacionalidad |
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Lugar/Ciudad de impartición
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ISOM-DIE-ETSIT-UPM |
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Fecha inicio
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26/10/2011 |
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Fecha fin
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26/10/2011 |