Descripción
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We have determined the cross-section r for color center generation under single Br ion impacts on amorphous SiO2. The evolution of the cross-sections, r(E) and r(Se), show an initial flat stage that we associate to atomic collision mechanisms. Above a certain threshold value (Se>2 keV/nm), roughly coinciding with that reported for the onset of macroscopic disorder (compaction), r shows a marked increase due to electronic processes. In this regime, a energetic cost of around 7.5 keV is necessary to create a non bridging oxygen hole center-E0 (NBOHC/E0) pair, whatever the input energy. The data appear consistent with a non-radiative decay of self-trapped excitons | |
Internacional
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Si |
JCR del ISI
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Si |
Título de la revista
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Appl. Phys. Lett. |
ISSN
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1077-3118 |
Factor de impacto JCR
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Información de impacto
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Volumen
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101 |
DOI
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doi: 10.1063/1.4757886 |
Número de revista
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154103 |
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