Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Sub-bandgap spectral photo-response analysis of Ti supersaturated Si
Year:2012
Research Areas
  • Engineering,
  • Electric engineers, electronic and automatic (eil),
  • Electronic devices,
  • Silicon,
  • Amorphous semiconductors,
  • Photon light receptor devices
Information
Abstract
We have analyzed the increase of the sheet conductance (?G?) under spectral illumination in high dose Ti implanted Si samples subsequently processed by pulsed-laser melting. Samples with Ti concentration clearly above the insulator-metal transition limit show a remarkably high ?G?, even higher than that measured in a silicon reference sample. This increase in the ?G? magnitude is contrary to the classic understanding of recombination centers action and supports the lifetime recovery predicted for concentrations of deep levels above the insulator-metal transition.
International
Si
JCR
Si
Title
Applied Physics Letters
ISBN
0003-6951
Impact factor JCR
3,844
Impact info
Volume
101
10.1063/1.4766171
Journal number
From page
192101-1
To page
192101-5
Month
SIN MES
Ranking
Participants
  • Autor: E. García-Hemme
  • Autor: R. García-Hernasanz
  • Autor: Javier Olea Ariza (UPM)
  • Autor: David Pastor Pastor (UPM)
  • Autor: A. del Prado
  • Autor: I. Martil
  • Autor: G. González-Díaz
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
S2i 2019 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)