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Descripción
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| We have observed the evolution of the accumulated stress during heteroepitaxial growth of highly lattice mismatched AlSb on GaAs by measuring the deformation of the substrate as a function of time. High resolution transmission electron microscopy images show almost all of the plastic relaxation is accommodated by an array of 90° misfit dislocations at the interface. The in-plane lattice parameter of the resulting metamorphic AlSb is slightly smaller (0.3%) than the bulk value and perfectly matches the lattice parameter of bulk GaSb. It is, therefore, possible to grow nearly stress-free GaSb on GaAs using a metamorphic AlSb buffer layer. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Appl. Phys. Lett. 100, |
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ISSN
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1077-3118 |
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Factor de impacto JCR
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Información de impacto
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Volumen
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100 |
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DOI
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10.1063/1.3674986 |
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Número de revista
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