Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Absorption coefficient for the intraband transitions in quantum dot materials
Year:2012
Research Areas
  • Electric engineers, electronic and automatic (eil),
  • Electronic devices,
  • Materials for electric engineering and electronics,
  • Silicon,
  • Solar cells
Information
Abstract
In this paper, we present calculations of the absorption coefficient for transitions between the bound states of quantum dots grown within a semiconductor and the extended states of the conduction band. For completeness, transitions among bound states are also presented. In the separation of variables, single band k·p model is used in which most elements may be expressed analytically. The analytical formulae are collected in the appendix of this paper. It is concluded that the transitions are strong enough to provide a quick path to the conduction band for electrons pumped from the valence to the intermediate band
International
Si
JCR
Si
Title
Progress in Photovoltaics
ISBN
1062-7995
Impact factor JCR
5,789
Impact info
Volume
10.1002/pip.1250
Journal number
From page
1
To page
10
Month
SIN MES
Ranking
Participants
  • Autor: Antonio Luque Lopez (UPM)
  • Autor: Antonio Marti Vega (UPM)
  • Autor: Alexander Virgil Mellor . (UPM)
  • Autor: David Fuertes Marron (UPM)
  • Autor: Ignacio Tobias Galicia (UPM)
  • Autor: Elisa Antolin Fernandez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
S2i 2019 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)