Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Interstitial Ti for intermediate band formation in Ti-supersaturated silicon
Year:2012
Research Areas
  • Physic chemistry,
  • Electric engineers, electronic and automatic (eil),
  • Electronic devices,
  • Silicon,
  • Solar cells
Information
Abstract
We have analyzed by means of Rutherford backscattering spectrometry (RBS) the Ti lattice location and the degree of crystalline lattice recovery in heavily Ti implanted silicon layers subsequently pulsed laser melted (PLM). Theoretical studies have predicted that Ti should occupy interstitial sites in silicon for a metallic-intermediate band (IB) formation. The analysis of Ti lattice location after PLM processes is a crucial point to evaluate the IB formation that can be clarifyied by means of RBS measurements. After PLM, time-of-flight secondary ion mass spectrometry measurements show that the Ti concentration in the layers is well above the theoretical limit for IB formation. RBS measurements have shown a significant improvement of the lattice quality at the highest PLM energy density studied. The RBS channeling spectra reveals clearly that after PLM processes Ti impurities are mostly occupying interstitial lattice sites.
International
Si
JCR
Si
Title
Journal of Applied Physics
ISBN
0021-8979
Impact factor JCR
2,168
Impact info
Volume
112
Journal number
11
From page
113514-1
To page
113514-5
Month
SIN MES
Ranking
Participants
  • Autor: David Pastor Pastor (UPM)
  • Autor: Javier Olea Ariza (UPM)
  • Autor: A. Muñoz-Martín
  • Autor: A. Climent-Font
  • Autor: I. Martil
  • Autor: G. González-Díaz
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)