Observatorio de I+D+i UPM

Memorias de investigación
Book chapters:
Ion implant technology for intermediate band solar cells
Year:2012
Research Areas
  • Electric engineers, electronic and automatic (eil),
  • Solar cells,
  • Technology of devices for engineering
Information
Abstract
This chapter describes the creation of an Intermediate Band (IB) on single crystal silicon substrates by means of high-dose Ti implantation and subsequent Pulsed Laser Melting (PLM). The Ti concentration over the Mott limit is confirmed by Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS) measurements and the recovery of the crystallinity after annealing by means of Glancing Incidence X Ray Diffraction (GIXRD) and Transmission Electron Microscopy (TEM). Rutherford Backscattering Spectroscopy (RBS) measurements show that most of the atoms are located interstitially. Analysis of the sheet resistance and mobility measured using the van der Pauw geometry shows a temperature-dependent decoupling between the implanted layer and the substrate. This decoupling and the high laminated conductivity of the implanted layer could not be explained except if we assume that an IB has been formed in the semiconductor. A specific model for the bilayer electrical behaviour has been developed. The fitting of this model and also the simulation of the sheet resistance with the ATLAS code allow to determine that the IB energetic position is located around 0.36?0.38eV below the conduction band. Carriers at the IB have a density very similar to the Ti concentration and behave as holes with mobilities as low as 0.4 cm2 Vs-1.
International
Si
10.100/978-3-642-23368-5
Book Edition
Book Publishing
Springer Verlag
ISBN
978-3-642-23368-5
Series
Springer Series in Optical Sciences
Book title
Next Generation of Photovoltaics: New concepts
From page
321
To page
346
Participants
  • Autor: David Pastor Pastor (UPM)
  • Autor: Javier Olea Ariza (UPM)
  • Autor: M. Toledano-Luque
  • Autor: I. Martil
  • Autor: G. González
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
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