|
Descripción
|
|
|---|---|
| This chapter concentrates on the development of the intermediate band solar cell (IBSC) using InAs quantum dots (QD) embeddedwithin an (Al,Ga)As single p-n junction. The growth and optimisation of the QD structures using molecular beam epitaxy (MBE) are discussed, and issues related to the manufacture of solar cell die for concentrator photovoltaic system applications are addressed. Advanced characterisation techniques have been employed to compare the performance of QD-IBSCs against reference (un-modified) single junction (Al,Ga)As cells, and results from these studies are assessed. It is concluded that the main operating principles of the IBSC have been demonstrated, including the generation of photocurrent by the absorption of two sub-bandgap photons, and voltage preservation when thermal and/or tunnelling-assisted escape from the intermediate band are suppressed. However, efficiencies in excess of those for un-modified (Al,Ga)As reference cells have not yet been achieved. | |
|
Internacional
|
Si |
|
DOI
|
10.100/978-3-642-23368-5 |
|
Edición del Libro
|
|
|
Editorial del Libro
|
Springer Verlag |
|
ISBN
|
978-3642233685 |
|
Serie
|
Springer Series in Optical Sciences |
|
Título del Libro
|
Next generation of photovoltaics: New concepts |
|
Desde página
|
251 |
|
Hasta página
|
275 |