Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Effect of concentration on the performance of quantum dot intermediate-band solar cells
Year:2012
Research Areas
  • Electric engineers, electronic and automatic (eil),
  • Electronic devices,
  • Solar cells,
  • Technology of devices for engineering
Information
Abstract
Implementation of a high-efficiency quantum dot intermediate-band solar cell (QD-IBSC) must accompany a sufficient photocurrent generation via IB states. The demonstration of a QD-IBSC is presently undergoing two stages. The first is to develop a technology to fabricate high-density QD stacks or a superlattice of low defect density placed within the active region of a p-i-n SC, and the second is to realize half-filled IB states to maximize the photocurrent generation by two-step absorption of sub-bandgap photons. For this, we have investigated the effect of light concentration on the characteristics of QDSCs comprised of multi-layer stacks of self-organized InAs/GaNAs QDs grown with and without impurity doping in molecular beam epitaxy.
International
Si
Congress
8th International Conference on Concentrating Photovoltaic Systems (CPV-8)
960
Place
Toledo, España
Reviewers
Si
ISBN/ISSN
978-0-7354-1086-2
10.1063/1.4753822
Start Date
16/04/2012
End Date
18/04/2012
From page
10
To page
13
AIP Conf. Proc. 1477
Participants
  • Autor: Y. Okada
  • Autor: K. Yoshida
  • Autor: Y. Shoji
  • Autor: A. Ogura
  • Autor: Pablo Garcia-Linares Fontes (UPM)
  • Autor: Antonio Marti Vega (UPM)
  • Autor: Antonio Luque Lopez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)