Descripción
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Implementation of a high-efficiency quantum dot intermediate-band solar cell (QD-IBSC) must accompany a sufficient photocurrent generation via IB states. The demonstration of a QD-IBSC is presently undergoing two stages. The first is to develop a technology to fabricate high-density QD stacks or a superlattice of low defect density placed within the active region of a p-i-n SC, and the second is to realize half-filled IB states to maximize the photocurrent generation by two-step absorption of sub-bandgap photons. For this, we have investigated the effect of light concentration on the characteristics of QDSCs comprised of multi-layer stacks of self-organized InAs/GaNAs QDs grown with and without impurity doping in molecular beam epitaxy. | |
Internacional
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Si |
Nombre congreso
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8th International Conference on Concentrating Photovoltaic Systems (CPV-8) |
Tipo de participación
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960 |
Lugar del congreso
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Toledo, España |
Revisores
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Si |
ISBN o ISSN
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978-0-7354-1086-2 |
DOI
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10.1063/1.4753822 |
Fecha inicio congreso
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16/04/2012 |
Fecha fin congreso
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18/04/2012 |
Desde la página
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10 |
Hasta la página
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13 |
Título de las actas
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AIP Conf. Proc. 1477 |