Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Study of the Electrical Behavior in Intermediate Band-Si Junctions
Year:2012
Research Areas
  • Physic chemistry,
  • Electric engineers, electronic and automatic (eil),
  • Materials for electric engineering and electronics
Information
Abstract
In this study we analyze the electrical behavior of a junction formed by an ultraheavily Ti implanted Si layer processed by a Pulsed Laser Melting (PLM) and the non implanted Si substrate. This electrical behavior exhibits an electrical decoupling effect in this bilayer that we have associated to an Intermediate Band (IB) formation in the Ti supersaturated Si layer. Time-of-flight secondary ion mass spectrometry (ToFSIMS) measurements show a Ti depth profile with concentrations well above the theoretical limit required to the IB formation. Sheet resistance and Hall mobility measurements in the van der Pauw configuration of these bilayers exhibit a clear dependence with the different measurement currents introduced (1
International
No
Congress
2012 MRS Fall Meeting - Symposium E
960
Place
Boston (MA), EEUU
Reviewers
Si
ISBN/ISSN
978-1-60511-470-5
10.1557/opl.2013.224
Start Date
25/11/2012
End Date
30/11/2012
From page
1
To page
7
MRS Proceedings / Volume 1493
Participants
  • Autor: David Pastor Pastor (UPM)
  • Autor: Javier Olea Ariza (UPM)
  • Autor: A. del Prado
  • Autor: E. García-Hemme
  • Autor: R. García-Hernansanz
  • Autor: I. Mártil
  • Autor: G. González-Díaz
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)