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Descripción
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In this study we analyze the electrical behavior of a junction formed by an ultraheavily Ti implanted Si layer processed by a Pulsed Laser Melting (PLM) and the non implanted Si substrate. This electrical behavior exhibits an electrical decoupling effect in this bilayer that we have associated to an Intermediate Band (IB) formation in the Ti supersaturated Si layer. Time-of-flight secondary ion mass spectrometry (ToFSIMS) measurements show a Ti depth profile with concentrations well above the theoretical limit required to the IB formation. Sheet resistance and Hall mobility measurements in the van der Pauw configuration of these bilayers exhibit a clear dependence with the different measurement currents introduced (1 | |
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Internacional
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No |
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Nombre congreso
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2012 MRS Fall Meeting - Symposium E |
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Tipo de participación
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960 |
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Lugar del congreso
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Boston (MA), EEUU |
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Revisores
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Si |
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ISBN o ISSN
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978-1-60511-470-5 |
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DOI
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10.1557/opl.2013.224 |
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Fecha inicio congreso
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25/11/2012 |
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Fecha fin congreso
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30/11/2012 |
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Desde la página
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1 |
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Hasta la página
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7 |
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Título de las actas
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MRS Proceedings / Volume 1493 |