Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Understanding CIGS device performances through photoreflectance spectroscopy
Year:2012
Research Areas
  • Electric engineers, electronic and automatic (eil),
  • Electronic devices,
  • Technology of devices for engineering
Information
Abstract
Cu(In1-x,Gax)S2 ; was studied using photoreflectance spectroscopy. In this study, efforts are devoted to optimizing PR set-up for measuring CIGS grown by electrodeposition: issues such as photoluminescence perturbation, high roughness and scattering are addressed. Dual frequency photoreflectance, where both probe and pump beams are modulated, is proposed here to over come the poor signal to noise ratio. Considering the low electric field regime, material parameters are extracted by employing the third derivative functional form of dielectric functions to fit data. The reliability of the technique is finally tested by measuring PR spectra on a specific 15 x 15cm2 wafer and explanations of PR line-shape evolution on this wafer are discussed.
International
Si
Congress
SPIE Thin Film Solar Technology IV
960
Place
San Diego (CA), EEUU
Reviewers
Si
ISBN/ISSN
0277-786X
10.1117/12.929784
Start Date
13/08/2012
End Date
14/08/2012
From page
847021
To page
847021
Proc. SPIE 8470, Thin Film Solar Technology IV
Participants
  • Autor: David Fuertes Marron (UPM)
  • Autor: A. Moreau
  • Autor: Irene Artacho Huertas (UPM)
  • Autor: L. Escoubas
  • Autor: J.J. Simon
  • Autor: C. Ruiz
  • Autor: V. Bermudez
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
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