Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Estimation of Local Crystallization of a-Si:H Thin Films by Nanosecond Pulsed Laser Irradiation Through Local Temperature Simulation
Year:2012
Research Areas
  • Engineering
Information
Abstract
We present a detailed study of the wavelength influence in pulsed laser annealing of amorphous silicon thin films, comparing the results for material modification at different fluence regimes both in the three fundamental harmonics of standard DPSS laser sources, UV (355 nm), visible (532 nm) and IR (1064 nm), and KrF (248 nm) excimer laser sources. Samples of hydrogenated amorphous silicon thin films were irradiated and characterized with MicroRaman techniques. A finite element model (FEM) was developed in COMSOL to simulate the process. The numerical a
International
Si
Congress
LANE 2012. 7th International Conference on Photonics Technologies.
960
Place
Fürth (Alemania)
Reviewers
Si
ISBN/ISSN
1875-3892
Start Date
12/11/2012
End Date
15/11/2012
From page
286
To page
294
Physics Procedia Volume 39, 2012, Laser Assisted Net shape Engineering 7 (LANE 2012)
Participants
  • Autor: Oscar Garcia Garcia (UPM)
  • Autor: Juan José García-Ballesteros . (UPM)
  • Autor: D. Munoz-Martin (UPM)
  • Autor: Sara Núñez Sánchez (UPM)
  • Autor: Miguel Morales Furio (UPM)
  • Autor: J. Carabe (CIEMAT)
  • Autor: I. Torres (CIEMAT)
  • Autor: J.J. Gandía (CIEMAT)
  • Autor: Carlos Luis Molpeceres Alvarez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Investigación en Ingeniería y Aplicaciones del Láser
  • Centro o Instituto I+D+i: Centro Laser
  • Departamento: Física Aplicada a la Ingeniería Industrial
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