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Descripción
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| In this work we present a study of laser-assisted local dopant diffusion in p-type c-Si wafers with standard ns DPSS laser sources emitting at different wavelengths. We used phosphorous doped amorphous silicon carbide films (a-SiCx(n)) for n+-p crystalline silicon diode fabrication in p- type c-Si wafers by means of laser irradiation, determining parametric windows that lead to high rectifying factors in the defined junctions. We include a discussion of the influence on the process of critical laser parameters, as laser wavelength and accumulated fluence, studying the morphology and the dark J-V characteristics for different irradiation conditions. Additionally, and for some selected processing conditions, Secondary Ion Mass Spectroscopy measurements are included to assess the doping profile obtained in the bulk material. An interesting conclusion of this study, and that is discussed in the work, is that best electrical conditions are obtained, for all the wavelengths investigated, for fluence values around the ablation threshold of the solid film used as dopant precursor. Finally, we include a brief discussion concerning the potential application of these processes for selective emitter formation in high efficiency c-Si solar cells, remarking the importance of using low cost laser sources ready to implement in production lines. | |
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Internacional
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Si |
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Nombre congreso
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E-MRS Spring 2012 - Symposium V. Laser materials processing for micro and nano applications. |
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Tipo de participación
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960 |
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Lugar del congreso
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Estrasburgo (Francia) |
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Revisores
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Si |
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ISBN o ISSN
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CDP08UPM |
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DOI
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Fecha inicio congreso
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14/05/2012 |
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Fecha fin congreso
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18/05/2012 |
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Desde la página
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1 |
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Hasta la página
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1 |
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Título de las actas
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E-MRS Spring 2012 Full Program Symposium V. Laser materials processing for micro and nano applications. Publicación electrónica en la web del congreso http://www.emrs-strasbourg.com/ |