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Memorias de investigación
Communications at congresses:
Piezoelectric and electroacoustic properties of Ti-doped AlN thin films as a function of Ti content
Year:2012
Research Areas
  • Electronic technology and of the communications
Information
Abstract
In this work we present the assessment of the structural and piezoelectric properties of Al(0.5-x)TixN0.5 compounds (titanium content <6% atomic), which are expected to possess improved properties than conventional AlN films, such as larger piezoelectric activity, thermal stability of frequency and temperature resistance. Al:Ti:N films were deposited from a twin concentric target of Al and Ti by reactive AC sputtering, which provided films with a radial gradient of the Ti concentration. The properties of the films were investigated as a function of their composition, which was measured by electron dispersive energy dispersive X-ray spectroscopy and Rutherford backscattering spectrometry. The microstructure and morphology of the films were assessed by X-ray diffraction and infrared reflectance. Their electroacoustic properties and dielectric constant were derived from the frequency response of BAW test resonators. Al:Ti:N films properties appear to be strongly dependent on the Ti content, which modifies the AlN wurtzite crystal structure leading to greater dielectric constant, lower sound velocities, lower electromechanical factor and moderately improved temperature coefficient of the resonant frequency.
International
Si
Congress
2012 IEEE International Ultrasonics Symposium
960
Place
Dresde, Alemania
Reviewers
Si
ISBN/ISSN
978-1-4673-4562-0
Start Date
07/10/2012
End Date
10/10/2012
From page
2734
To page
2736
2012 IEEE International Ultrasonics Symposium Proceedings
Participants
  • Autor: Enrique Iborra Grau (UPM)
  • Autor: José Capilla Osorio (UPM)
  • Autor: Jimena Olivares Roza (UPM)
  • Autor: Marta Clement Lorenzo (UPM)
  • Autor: Valeriy Felmetsger (OEM Group Inc.)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Departamento: Tecnología Electrónica
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