Memorias de investigación
Ponencias en congresos:
On the Lateral Excitation Of Shear Modes in AlN Layered Resonators
Año:2012
Áreas de investigación
  • Tecnología electrónica y de las comunicaciones
Datos
Descripción
In this paper we describe the fabrication and frequency characterization of different structures intended for the lateral excitation of shear modes in AlN c-axis-oriented films, which are at the same time designed to minimize the excitation of longitudinal modes. Laterally excited resonators were built on partially metallic (SiO2, W) and insulating (SiOC, Si3N4) acoustic mirrors built on silicon substrates, and on insulating mirrors (SiO2, TaOx) built on insulating glass plates. TiOx seed layers were used to stimulate the growth of highly c-axis oriented AlN films, which was confirmed by XRD and SAW measurements. Coplanar Mo electrodes of different geometries were defined on top of the AlN films to excite the shear modes. All the structures analyzed displayed a clear longitudinal mode, corresponding to an acoustic velocity of 11000 m/s, but a null or extremely weak shear response corresponding to a sound velocity of around 6350 m/s. The simulation of the frequency response based on Mason?s model confirms that the shear resonance is extremely weak. The observed longitudinal modes are attributed either to the field applied between the electrodes and a conductive plane (metallic layer or Si substrate) or to the electric field parallel to the c-axis in the edges of the electrodes or in tilted grains. The low excitation of shear modes is attributed to the very low values of electric field strength parallel to the surface
Internacional
Si
Nombre congreso
International Ultrasonics Symposium
Tipo de participación
960
Lugar del congreso
Dresde, Alemania
Revisores
Si
ISBN o ISSN
978-1-4673-4562-0
DOI
Fecha inicio congreso
07/10/2013
Fecha fin congreso
10/10/2013
Desde la página
535
Hasta la página
538
Título de las actas
2012 IEEE International Ultrasonics Symposium Proceedings
Esta actividad pertenece a memorias de investigación
Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Centro o Instituto I+D+i: Centro de Materiales y Dispositivos Avanzados para Tecnologías de Información y Comunicaciones
  • Departamento: Tecnología Fotónica y Bioingeniería
  • Departamento: Tecnología Electrónica