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Descripción
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| SiGe nanowires of different Ge atomic fractions up to 15% were grown and ex-situ n-type doped by diffusion from a solid source in contact with the sample. The phenomenon of dielectrophoresis was used to locate single nanowires between pairs of electrodes in order to carry out electrical measurements. The measured resistance of the as-grown nanowires is very high, but it decreases more than three orders of magnitude upon doping, indicating that the doping procedure used has been effective. | |
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Internacional
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Si |
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Nombre congreso
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Materials Research Society 2011 Fall Meeting |
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Tipo de participación
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960 |
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Lugar del congreso
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Boston |
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Revisores
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Si |
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ISBN o ISSN
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1946-4274 |
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DOI
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10.1557/opl.2012.33 |
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Fecha inicio congreso
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28/11/2011 |
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Fecha fin congreso
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02/12/2011 |
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Desde la página
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1 |
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Hasta la página
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6 |
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Título de las actas
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Materials Research Society Symposium Proceedings 1408, BB10-06 (2012) MRS Online Proceedings Library |