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Memorias de investigación
Communications at congresses:
Individualization and electrical characterization of SiGe nanowires
Year:2012
Research Areas
  • Phisics,
  • Electronic technology and of the communications
Information
Abstract
SiGe nanowires of different Ge atomic fractions up to 15% were grown and ex-situ n-type doped by diffusion from a solid source in contact with the sample. The phenomenon of dielectrophoresis was used to locate single nanowires between pairs of electrodes in order to carry out electrical measurements. The measured resistance of the as-grown nanowires is very high, but it decreases more than three orders of magnitude upon doping, indicating that the doping procedure used has been effective.
International
Si
Congress
Materials Research Society 2011 Fall Meeting
960
Place
Boston
Reviewers
Si
ISBN/ISSN
1946-4274
10.1557/opl.2012.33
Start Date
28/11/2011
End Date
02/12/2011
From page
1
To page
6
Materials Research Society Symposium Proceedings 1408, BB10-06 (2012) MRS Online Proceedings Library
Participants
  • Autor: M. M. Monasterio (U. Carlos III)
  • Autor: Andres Rodriguez Dominguez (UPM)
  • Autor: Tomas Rodriguez Rodriguez (UPM)
  • Autor: C. Ballesteros (U. Carlos III)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Conectividad
  • Departamento: Tecnología Electrónica
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