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Memorias de investigación
Communications at congresses:
SiGe nanowires grown by LPCVD using Ga-Au catalysts
Year:2012
Research Areas
  • Phisics,
  • Electronic technology and of the communications
Information
Abstract
The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. The grown nanowires are cylindrical and straight, with a defect-free crystalline structure, sharp nanowire-droplet interfaces and an almost constant Ge atomic fraction throughout all their length. These features represent significant improvements over the results obtained using pure Au
International
Si
Congress
Materials Research Society 2011 Fall Meeting
960
Place
Boston
Reviewers
Si
ISBN/ISSN
1946-4274
10.1557/opl.2012.34
Start Date
28/11/2011
End Date
02/12/2011
From page
1
To page
6
Materials Research Society Symposium Proceedings 1408, BB10-07 (2012) MRS Online Proceedings Library
Participants
  • Autor: M. Monasterio (U. Carlos III)
  • Autor: Andres Rodriguez Dominguez (UPM)
  • Autor: Tomas Rodriguez Rodriguez (UPM)
  • Autor: C. Ballesteros (U. Carlos III)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Conectividad
  • Departamento: Tecnología Electrónica
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