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Descripción
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| The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. The grown nanowires are cylindrical and straight, with a defect-free crystalline structure, sharp nanowire-droplet interfaces and an almost constant Ge atomic fraction throughout all their length. These features represent significant improvements over the results obtained using pure Au | |
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Internacional
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Si |
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Nombre congreso
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Materials Research Society 2011 Fall Meeting |
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Tipo de participación
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960 |
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Lugar del congreso
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Boston |
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Revisores
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Si |
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ISBN o ISSN
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1946-4274 |
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DOI
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10.1557/opl.2012.34 |
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Fecha inicio congreso
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28/11/2011 |
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Fecha fin congreso
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02/12/2011 |
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Desde la página
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1 |
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Hasta la página
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6 |
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Título de las actas
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Materials Research Society Symposium Proceedings 1408, BB10-07 (2012) MRS Online Proceedings Library |