Communications at congresses:
SiGe nanowires grown by LPCVD using Ga-Au catalysts
SiGe nanowires grown by LPCVD using Ga-Au catalysts
Year:2012
Research Areas
-
Phisics, -
Electronic technology and of the communications
Information
|
Abstract
|
|
|---|---|
| The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. The grown nanowires are cylindrical and straight, with a defect-free crystalline structure, sharp nanowire-droplet interfaces and an almost constant Ge atomic fraction throughout all their length. These features represent significant improvements over the results obtained using pure Au | |
|
International
|
Si |
|
Congress
|
Materials Research Society 2011 Fall Meeting |
|
|
960 |
|
Place
|
Boston |
|
Reviewers
|
Si |
|
ISBN/ISSN
|
1946-4274 |
|
|
10.1557/opl.2012.34 |
|
Start Date
|
28/11/2011 |
|
End Date
|
02/12/2011 |
|
From page
|
1 |
|
To page
|
6 |
|
|
Materials Research Society Symposium Proceedings 1408, BB10-07 (2012) MRS Online Proceedings Library |
Participants
- Autor: M. Monasterio (U. Carlos III)
- Autor: Andres Rodriguez Dominguez (UPM)
- Autor: Tomas Rodriguez Rodriguez (UPM)
- Autor: C. Ballesteros (U. Carlos III)
Research Group, Departaments and Institutes related
- Creador: Grupo de Investigación: Grupo de Conectividad
- Departamento: Tecnología Electrónica
S2i 2021 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)