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Descripción
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| Si Nanowires (NWs) were studied by Raman microspectroscopy. The Raman spectrum of the NWs reveals important thermal effects, which broaden and shift the one phonon Raman bands. The low thermal conductivity of the NWs and the low thermal dissipation are responsible for the temperature enhancement in the NW under the excitation with the laser beam. We have modeled, using finite element methods, the interaction between the laser beam and the NWs. The Raman spectrum of Si NWs is interpreted in terms of the temperature induced by the laser beam excitation, in correlation with finite element methods (fem) for studying the interaction between the laser beam and the NWs. | |
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Internacional
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Si |
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Nombre congreso
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14th International Conference on Defects Recognition, Imaging and Physics in Semiconductors |
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Tipo de participación
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960 |
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Lugar del congreso
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Miyazaki, Japan |
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Revisores
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Si |
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ISBN o ISSN
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1662-9752 |
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DOI
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10.4028/www.scientific.net/MSF.725.255 |
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Fecha inicio congreso
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25/09/2011 |
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Fecha fin congreso
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29/09/2011 |
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Desde la página
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255 |
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Hasta la página
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258 |
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Título de las actas
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Materials Science Forum 725 http://www.scientific.net/MSF |