Memorias de investigación
Ponencias en congresos:
In situ control of Si (100) and Ge (100) surface preparation for the heteroepitaxy of III-V solar cell architectures
Año:2012
Áreas de investigación
  • Industria electrónica
Datos
Descripción
Si(100) and Ge(100) substrates essential for subsequent III-V integration were studied in the hydrogen ambient of a metalorganic vapor phase epitaxy reactor. Reflectance anisotropy spectroscopy (RAS) enabled us to distinguish characteristic configurations of vicinal Si(100) in situ: covered with oxide, cleaned by thermal removing in H2, and terminated with monohydrides when cooling in H2 ambient. RAS measurements during cooling in H2 ambient after the oxide removal process revealed a transition from the clean to the monohydride terminated Si(100) surface dependent on process temperature. For vicinal Ge(100) we observed a characteristic RA spectrum after annealing and cooling in H2 ambient. According to results from X-ray photo electron spectroscopy and Fourier-transform infrared spectroscopy the spectrum corresponds to the monohydride terminated Ge(100) surface.
Internacional
Si
Nombre congreso
8th International Conference on Concentrating Photovoltaic Systems
Tipo de participación
960
Lugar del congreso
Toledo (Spain)
Revisores
Si
ISBN o ISSN
978-0-7354-1086-2
DOI
10.1063/1.4753827
Fecha inicio congreso
16/04/2012
Fecha fin congreso
18/04/2012
Desde la página
32
Hasta la página
35
Título de las actas
AIP Conference Proceedings, 1477, 32-35 (2012)
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: S. Brückner
  • Autor: O. Supplie
  • Autor: Enrique Barrigon Montañes UPM
  • Autor: A. Dobrich
  • Autor: C. Löbbels
  • Autor: P. Kleinschmidt
  • Autor: Ignacio Rey-Stolle Prado UPM
  • Autor: H. Doescher
  • Autor: T. Hannappel
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física