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Descripción
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| An important requirement to achieve low defect densities in the III-V epilayers deposited on group IV substrates is a suitable substrate surface preparation prior to heteroepitaxy. Generation of double layer steps on Si(100) or Ge(100) is desirable for subsequent anti-phase domain-free heteroepitaxy of III-V semiconductors. A contaminationfree MOVPE-to-UHV transfer system allowed us to analyze different surfaces with various UHV based surface-sensitive techniques such as xray photo electron spectroscopy (XPS), low energy electron diffraction (LEED), and scanning tunneling microscopy (STM). STM measurements on Si(100) showed the formation of D_A or D_B - double-layer steps on a surface with an intermediate offcut of 2? in [011], depending on the process parameters. STM measurements on Ge(100) showed single-layer steps after homoepitaxial growth on substrates with 0.2º offcut in [011] direction, and double-layer steps after deoxidation on substrates with 6? offcut in [011]. | |
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Internacional
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Si |
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Nombre congreso
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76 Jahrestagung der Deutsche Physikalische Geselschaft und DPG-Frühjahrstagung |
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Tipo de participación
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960 |
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Lugar del congreso
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Berlin |
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Revisores
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Si |
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ISBN o ISSN
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0-000000-00-0 |
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DOI
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Fecha inicio congreso
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25/03/2012 |
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Fecha fin congreso
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30/03/2012 |
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Desde la página
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1 |
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Hasta la página
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1 |
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Título de las actas
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Proc. 76 Jahrestagung der Deutsche Physikalische Geselschaft und DPG-Frühjahrstagung |