Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
Year:2013
Research Areas
  • Description,
  • Defects,
  • Structure,
  • Transistors of efect of drugged (modfet) modulation field,
  • Transistors of field efect of mos (mosfet) type,
  • Semiconductors ii-vi, iii-v and iv-iv
Information
Abstract
Developer-based wet chemical etch of nearly lattice-matched InAlGaN/GaN heterostructures (HEMT-like) has been studied in detail by means of Rutherford backscattering spectroscopy, x-ray diffraction, atomic force microscopy and reciprocal space mapping (RSM). Etch isotropy depended on the rms surface roughness of the as-grown material. The profiles of etched samples varied in crack density, giving rise to island-like structures. We found that a possible reason for the preferential etching can be ascribed to the dislocations present in the quaternary layers originating in the underlying GaN. Moreover, the etched material suffers crystal relaxation as confirmed by RSM.
International
Si
JCR
Si
Title
Semiconductor Science And Technology
ISBN
0268-1242
Impact factor JCR
1,723
Impact info
Datos JCR del año 2011
Volume
28
Journal number
From page
055007
To page
(6pp)
Month
SIN MES
Ranking
Participants
  • Autor: Tommaso Brazzini . (UPM)
  • Autor: Marko Jak Tadjer . (UPM)
  • Autor: Zarko Gacevic (UPM)
  • Autor: Saurabh Pandey (Department of Physics, University of Bologna)
  • Autor: Anna Cavallini (Department of Physics, University of Bologna)
  • Autor: Fernando Calle Gomez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Ingeniería Electrónica
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)