Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Impact of AlN Spacer on Metal?Semiconductor?Metal Pt?InAlGaN/GaN Heterostructures for Ultraviolet Detection
Year:2013
Research Areas
  • Physics - Semiconductors and band structure,
  • Photon light receptor devices,
  • Semiconductor devices of potency,
  • Technology of devices for engineering
Information
Abstract
We report on metal-semiconductor-metal (MSM) photodetectors (PDs) fabricated on InAlGaN/GaN two-dimensional electron gas (2DEG) heterostructures. Electrical and photodetection properties were compared in two structures with and without an AlN spacer between the barrier (InAlGaN) and the GaN. The presence of the spacer hugely reduces the leakage current, allowing biasing at higher voltages. In photodetection, gain is obtained in both structures at a high bias. The photocurrent transient behavior revealed a faster response for excitation energy close to the GaN band edge than for energy above the barrier band edge. The fabrication and improvement of this type of device can lead to integration with the already mature high-electron-mobility transistor (HEMT) technology.
International
Si
JCR
Si
Title
Japanese Journal of Applied Physics
ISBN
0021-4922
Impact factor JCR
1,058
Impact info
Datos JCR del año 2011
Volume
52
Journal number
From page
08JK04
To page
4pp
Month
SIN MES
Ranking
Participants
  • Autor: Tommaso Brazzini . (UPM)
  • Autor: Saurabh Pandey (Department of Physics, University of Bologna)
  • Autor: Fatima Romero Rojo (UPM)
  • Autor: Pavel Yu. Bokov (Faculty of Physics, Moscow State University)
  • Autor: Martin Feneberg (Institut fur Experimentelle Physik, Otto-von-Guericke-Universitat Magdeburg)
  • Autor: Gema Tabares Jimenez (UPM)
  • Autor: Anna Cavallini (Department of Physics, University of Bologna)
  • Autor: Ruediger Goldhahn (Institut fur Experimentelle Physik, Otto-von-Guericke-Universitat Magdeburg)
  • Autor: Fernando Calle Gomez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Departamento: Ingeniería Electrónica
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)