Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures
Year:2012
Research Areas
  • Physics - Structure of materials,
  • Physics - Semiconductors and band structure,
  • Technology of devices for engineering
Information
Abstract
In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage current behaviour has been interpreted with a Poole-Frenkel emission of electrons from trap states near the metal-semiconductor junction to dislocation induced states. The variation of the Schottky barrier height as a function of the AlN layer thickness has been measured and discussed, considering the role of the surface states in the formation of the two dimensional electron gas at AlN/GaN interface.
International
Si
JCR
Si
Title
Applied Physics Letters
ISBN
0003-6951
Impact factor JCR
3,844
Impact info
Datos JCR del año 2011
Volume
100
Journal number
From page
152116-1
To page
152116-4
Month
SIN MES
Ranking
Participants
  • Autor: Saurabh Pandey (Department of Physics, University of Bologna)
  • Autor: Daniela Cavalcoli (Department of Physics, University of Bologna)
  • Autor: Beatrice Fraboni (Department of Physics, University of Bologna)
  • Autor: Anna Cavallini (Department of Physics, University of Bologna)
  • Autor: Tommaso Brazzini . (UPM)
  • Autor: Fernando Calle Gomez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Departamento: Ingeniería Electrónica
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)