Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Nanocrack-induced leakage current in AlInN/AlN/GaN
Year:2012
Research Areas
  • Physics - Structure of materials,
  • Physics - Semiconductors and band structure,
  • Technology of devices for engineering
Information
Abstract
Here we report on the study of nano-crack formation in Al1?xInxN/AlN/GaN heterostructures, on its association with composition fluctuation and on its local electrical properties. It is shown here that indium segregation at nano-cracks and threading dislocations originating from the non-pseudomorphic AlN interlayer could be the cause of the high reverse-bias gate leakage current of Ni/Au Schottky contacts on Al1?xInxN/AlN/GaN heterostructures and significantly affects the contact rectifying behavior. Segregation of indium around crack tips in Al1?xInxN acting as conductive paths was assessed with conductive atomic force microscopy.
International
Si
JCR
Si
Title
Scripta Materialia
ISBN
1359-6462
Impact factor JCR
2,699
Impact info
Datos JCR del año 2011
Volume
66
Journal number
From page
327
To page
330
Month
SIN MES
Ranking
Participants
  • Autor: albert minj (Department of Physics, University of Bologna)
  • Autor: Daniela Cavalcoli (Department of Physics, University of Bologna)
  • Autor: saurabh pandey (Department of Physics, University of Bologna)
  • Autor: Beatrice Fraboni (Department of Physics, University of Bologna)
  • Autor: Anna Cavallini (Department of Physics, University of Bologna)
  • Autor: Tommaso Brazzini . (UPM)
  • Autor: Fernando Calle Gomez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Departamento: Ingeniería Electrónica
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)