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Descripción
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| An intermediate-band (IB) photovoltaic material, which has an isolated metallic band located between the top of the valence band and bottom of the conduction band of some semiconductors, has been proposed as third generation solar cell to be used in photovoltaic applications. The aim of this work is to show that SnS2 with partial substitution of Sn by V in octahedral positions can produce an intermediate band material. SnS2 can be synthesized in powder form with a hydrothermal method. The insertion of vanadium in SnS2 is found to produce an absorption spectrum in the UV-Vis-NIR range that displays a new sub-bandgap feature in agreement with the quantum calculations. A photocatalytic reaction-based test verifies that this sub-bandgap absorption produces highly mobile electrons and holes in the material that may be used for the solar energy conversion, giving experimental support to the quantum calculations predictions. Our calculations were made using spin-polarized DFT with the generalized gradient (GGA) approximation using the VASP code. We expect that if the material presented here can be made in thin film form with any of the existing technologies, and is then engineered into a photovoltaic device with the proper contacting layers, a significant enhancement in the efficiency of photovoltaic solar cells can be obtained, fulfilling the expectations of the IB PV cell proposal | |
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Internacional
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Si |
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Nombre congreso
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E-MRS 2012 Spring Meeting |
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Tipo de participación
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960 |
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Lugar del congreso
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Estrasburgo |
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Revisores
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Si |
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ISBN o ISSN
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0-000000-00-0 |
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DOI
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Fecha inicio congreso
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14/05/2012 |
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Fecha fin congreso
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18/05/2012 |
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Desde la página
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1 |
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Hasta la página
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1 |
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Título de las actas
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Proc. EMRS 2012 Symposium B |