Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
Year:2012
Research Areas
  • Technology of devices for engineering
Information
Abstract
Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
International
Si
Congress
International Workshop on Nitride Semiconductors (IWN2012).
960
Place
Sapporo (Japan)
Reviewers
Si
ISBN/ISSN
000-0-0000-0000-0
Start Date
14/10/2012
End Date
19/10/2012
From page
1
To page
3
Actas del IWN2012
Participants
  • Autor: Tommaso Brazzini . (UPM)
  • Autor: Marko Jak Tadjer . (UPM)
  • Autor: Zarko Gacevic (UPM)
  • Autor: Saurabh Pandey (Department of Physics, University of Bologna)
  • Autor: Anna Cavallini (Department of Physics, University of Bologna)
  • Autor: Fernando Calle Gomez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Departamento: Ingeniería Electrónica
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