Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Photoresponse of metal-semiconductor-metal InAlGaN/GaN structures
Year:2012
Research Areas
  • Other electronic devices,
  • Photon light receptor devices
Information
Abstract
Photoresponse of metal-semiconductor-metal InAlGaN/GaN structures
International
Si
Congress
International Workshop on Nitride Semiconductors (IWN2012)
960
Place
Reviewers
Si
ISBN/ISSN
000-0-0000-0000-0
Start Date
14/10/2012
End Date
19/10/2012
From page
1
To page
3
Actas del IWN2012
Participants
  • Autor: Tommaso Brazzini . (UPM)
  • Autor: Saurabh Pandey (Department of Physics, University of Bologna)
  • Autor: Fatima Romero Rojo (UPM)
  • Autor: Pavel Yu. Bokov (Faculty of Physics, Moscow State University)
  • Autor: Martin Feneberg (Institut fur Experimentelle Physik, Otto-von-Guericke-Universitat Magdeburg)
  • Autor: Gema Tabares Jimenez (UPM)
  • Autor: Anna Cavallini (Department of Physics, University of Bologna)
  • Autor: Ruediger Goldhahn (Institut fur Experimentelle Physik, Otto-von-Guericke-Universitat Magdeburg)
  • Autor: Fernando Calle Gomez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Departamento: Ingeniería Electrónica
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