Memorias de investigación
Artículos en revistas:
Electronic structure of copper nitrides as a function of nitrogen content
Año:2013
Áreas de investigación
  • Ingenierías
Datos
Descripción
The nitrogen content dependence of the electronic properties for copper nitride thin films with an atomic percentage of nitrogen ranging from 26±2 to 33±2 have been studied by means of optical (spectroscopic ellipsometry), thermoelectric (Seebeck), and electrical resistivity measurements. The optical spectra are consistent with direct optical transitions corresponding to the stoichiometric semiconductor Cu3N plus a free-carrier contribution, essentially independent of temperature, which can be tuned in accordance with the N-excess. Deviation of the N content from stoichiometry drives to significant decreases from ?5 to?50 ?V/K in the Seebeck coefficient and to large enhancements, from 10?3 up to 10 ? cm, in the electrical resistivity. Band structure and density of states calculations have been carried out on the basis of the density functional theory to account for the experimental results.
Internacional
Si
JCR del ISI
Si
Título de la revista
THIN SOLID FILMS
ISSN
0040-6090
Factor de impacto JCR
1,89
Información de impacto
Volumen
531
DOI
10.1016/j.tsf.2013.01.030
Número de revista
Desde la página
588
Hasta la página
591
Mes
SIN MES
Ranking
0
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Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Fusión Nuclear Inercial y Tecnología de fusión
  • Centro o Instituto I+D+i: Instituto de Fusión Nuclear
  • Departamento: Ingeniería Nuclear