Memorias de investigación
Artículos en revistas:
Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si
Año:2013

Áreas de investigación
  • Dispositivos electrónicos,
  • Células solares

Datos
Descripción
In this study, we present a structural and optoelectronic characterization of high dose Ti implanted Si subsequently pulsed-laser melted (Ti supersaturated Si). Time-of-flight secondary ion mass spectrometry analysis reveals that the theoretical Mott limit has been surpassed after the laser process and transmission electron microscopy images show a good lattice reconstruction. Optical characterization shows strong sub-band gap absorption related to the high Ti concentration. Photoconductivity measurements show that Ti supersaturated Si presents spectral response orders of magnitude higher than unimplanted Si at energies below the band gap. We conclude that the observed below band gap photoconductivity cannot be attributed to structural defects produced by the fabrication processes and suggest that both absorption coefficient of the new material and lifetime of photoexcited carriers have been enhanced due to the presence of a high Ti concentration. This remarkable result proves that Ti supersaturated Si is a promising material for both infrared detectors and high efficiency photovoltaic devices.
Internacional
Si
JCR del ISI
Si
Título de la revista
Journal of Applied Physics
ISSN
0021-8979
Factor de impacto JCR
2,21
Información de impacto
Volumen
114
DOI
Número de revista
Desde la página
1
Hasta la página
7
Mes
SIN MES
Ranking

Esta actividad pertenece a memorias de investigación

Participantes
  • Autor: Javier Olea Ariza UPM
  • Autor: D Pastor
  • Autor: A. del Prado
  • Autor: E. García-Hemme
  • Autor: R Garcia-Hernansanz
  • Autor: I. Martil
  • Autor: G. González-Diaz

Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar