Descripción
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Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon. | |
Internacional
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Si |
Nombre congreso
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2013 Spanish Conference on Electron Devices (CDE) |
Tipo de participación
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960 |
Lugar del congreso
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Valladolid |
Revisores
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Si |
ISBN o ISSN
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978-14-6734-666-5 |
DOI
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Fecha inicio congreso
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12/02/2013 |
Fecha fin congreso
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14/02/2013 |
Desde la página
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337 |
Hasta la página
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340 |
Título de las actas
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Proc. CDE-2013 |