Memorias de investigación
Ponencias en congresos:
Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material
Año:2013
Áreas de investigación
  • Ingeniería eléctrica, electrónica y automática,
  • Dispositivos electrónicos
Datos
Descripción
We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB) material, i.e. a semiconductor material with a band of allowed states within the bandgap. Sheet resistance and Hall mobility measurements as a function of the temperature show an unusual behavior that has been well explained in the framework of the IB material theory, supposing that we are dealing with a junction formed by the IB material top layer and the n-Si substrate. Using an analytical model that fits with accuracy the experimental sheet resistance and mobility curves, we have obtained the values of the exponential factor for the thermically activated junction resistance of the bilayer, showing important differences as a function of the implanted element. These results could allow us to engineer the IB properties selecting the implanted element depending on the required properties for a specific application.
Internacional
Si
Nombre congreso
2013 Spanish Conference on Electron Devices (CDE 2013)
Tipo de participación
960
Lugar del congreso
Valladolid
Revisores
Si
ISBN o ISSN
978-14-6734-666-5
DOI
Fecha inicio congreso
12/02/2013
Fecha fin congreso
14/02/2013
Desde la página
377
Hasta la página
380
Título de las actas
Proc. CDE-2013
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: E. Garcia-Hemme
  • Autor: R. Garcia-Hernansanz
  • Autor: Javier Olea Ariza UPM
  • Autor: D. Pastor
  • Autor: A. del Prado
  • Autor: I. Martil
  • Autor: G. Gonzalez-Diaz
  • Autor: Perla Wahnon Benarroch UPM
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Tecnologías Especiales Aplicadas a la Telecomunicación