Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Optimization of the luminescence emission in nanocrystalline SiGe/SiO2 multilayers
Year:2007
Research Areas
  • Electronics engineering
Information
Abstract
Luminescent multilayers of SiGe nanocrystals embedded in an oxide matrix have been fabricated by Low Pressure Chemical Vapour Deposition of SiGe and SiO2 in a single run followed by a Rapid Thermal Annealing treatment to crystallize the SiGe nanoparticles. Structural parameters like the diameter of the nanoparticles and the oxide interlayer thickness, as well as the annealing conditions have been investigated in order to get the maximum intensity of the luminescence emission. Structures with small nanoparticles (3¿4.5 nm) separated by thick oxide barriers (≈35 nm) annealed at 900 °C for 60 s yield the maximum intensity as a result of a compromise between the appropriate crystallization of the small nanoparticles and a reduced degradation of their composition by Ge diffusion. An additional treatment at 450 °C in forming gas for dangling-bond passivation increases the intensity of the luminescence by 25%.
International
Si
JCR
Si
Title
PHYS STATUS SOLIDI A
ISBN
0031-8965
Impact factor JCR
1,214
Impact info
Volume
204
Journal number
6
From page
1639
To page
1644
Month
SIN MES
Ranking
Participants
  • Participante: A. Kling
  • Participante: M.I. Ortiz
  • Participante: M Avella
  • Autor: Tomas Rodriguez Rodriguez (UPM)
  • Autor: Andres Rodriguez Dominguez (UPM)
  • Participante: A.C. Prieto
  • Participante: C Ballesteros (U)
  • Autor: Jesus Sangrador Garcia (UPM)
  • Participante: J. Jiménez (Universidad de Valladolid)
Research Group, Departaments and Institutes related
  • Creador: Departamento: Tecnología Electrónica
S2i 2019 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
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