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Descripción
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| Silicon oxide films with excess of Si were deposited by Low Pressure Chemical Vapor Deposition. The growth rate of the films and the excess of silicon in them have been modeled using a Face-centered Central Composite Design experiment. Samples annealed at 1100 ºC show luminescence (665 nm) at 80K and at room temperature associated to Si nanocrystals. | |
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Internacional
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Si |
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DOI
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Edición del Libro
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0 |
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Editorial del Libro
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ISBN
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978-1-55899-949-7 |
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Serie
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Título del Libro
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Amorphous and Polycrystalline Thin-Film Silicon Science and Technology¿2007, edited by Virginia Chu, Seiichi Miyazaki, Arokia Nathan, Jeffrey Yang, Hsiao-Wen Zan (Mater. Res. Soc. Symp. Proc. |
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Desde página
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989 |
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Hasta página
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231 |