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Descripción
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| A significant improvement of silicon solar cells can be achieved when an effective back contact is used. In this work, laser-fired contacts (LFC) have been analysed as low-temperature back contacts for rearpassivated silicon-heterojunction solar cells. Layers of intrinsic hydrogenated amorphous silicon, (i)a-Si:H, deposited by plasma-enhanced chemical-vapour deposition (PECVD) have been used as dielectrics in order to passivate the back surface of p-CZ (Czochralski) polished monocrystalline silicon wafers. The quality of these (i)a-Si:H layers has been evaluated as a function of their PECVD deposition parameters and their thicknesses (from 100 to 250 nm). Then an aluminium (Al) back contact has been thermally evaporated. A ns-pulsed Nd:YVO4 laser beam, ?=532 nm, has been used to fire the Al through the (i)a-Si:H layer to create the rear-point LFC back contacts. To obtain low-ohmicresistance back contacts, the irradiation parameters have been adjusted for each (i)a-Si:H thickness. Finally, silicon heterojunction solar cells (SHJ) with laser-fired back contacts with different contacted area have been evaluated. Annealing treatments have been needed to improve the devices. | |
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Internacional
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Si |
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Nombre congreso
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28th European Photovoltaic Solar Energy Conference and Exhibition |
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Tipo de participación
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960 |
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Lugar del congreso
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París. Francia |
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Revisores
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Si |
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ISBN o ISSN
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3-936-338-33-7 |
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DOI
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Fecha inicio congreso
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30/09/2013 |
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Fecha fin congreso
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04/10/2013 |
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Desde la página
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2024 |
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Hasta la página
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2028 |
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Título de las actas
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Proc. PVSEC 2013 |