|
Descripción
|
|
|---|---|
| The strength of quasi-monocrystalline silicon wafers has been studied. The study has been carried out employing the four line bending test and simulating them by means of FE models. For the analysis, failure stresses were fitted to a three-parameter Weibull distribution. | |
|
Internacional
|
Si |
|
JCR del ISI
|
Si |
|
Título de la revista
|
Progress in Photovoltaics |
|
ISSN
|
1062-7995 |
|
Factor de impacto JCR
|
9,696 |
|
Información de impacto
|
Datos JCR del año 2013 |
|
Volumen
|
22 |
|
DOI
|
10.1002/pip.2372, 2013 |
|
Número de revista
|
12 |
|
Desde la página
|
1204 |
|
Hasta la página
|
1212 |
|
Mes
|
DICIEMBRE |
|
Ranking
|
Q1 |