Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Advances on MBE Selective Area Growth of III-Nitride nanostructures: from nanoLEDs to pseudo substrates
Year:2014
Research Areas
  • Physics - Semiconductors and band structure
Information
Abstract
The aim of this work is to provide an overview on the recent advances in the selective area growth (SAG) of (In)GaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. The first three sections deal with the basic growth mechanisms of GaN SAG and the emission control in the entire ultraviolet to infrared range, including approaches for white light emission, using InGaN disks and thick segments on axial nanocolumns. SAG of axial nanostructures is eveloped on both GaN/sapphire templates and GaN-buffered Si(111). As an alternative to axial nanocolumns, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods. Finally, section 5 reports on the SAG of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the templates is strongly reduced as indicated by a dramatic improvement of the optical properties. In the case of SAG on nonpolar (11-22) templates, the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of these nanostructures.
International
Si
JCR
No
Title
International Journal of High Speed Electronics and Systems
ISBN
1793-6438
Impact factor JCR
Impact info
Volume
23
Journal number
From page
1450020-1
To page
1450020-38
Month
SIN MES
Ranking
Participants
  • Autor: Steven Albert . (UPM)
  • Autor: Ana Mª Bengoechea Encabo (UPM)
  • Autor: Francesca Barbagini
  • Autor: David Lopez-Romero Moraleda (UPM)
  • Autor: Miguel Angel Sanchez Garcia (UPM)
  • Autor: Enrique Calleja Pardo (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Ingeniería Electrónica
S2i 2019 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)