Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Effect of annealing atmosphere in the properties of GaAs layers deposited by sputtering techniques on Si substrates
Year:2014
Research Areas
  • Electric engineers, electronic and automatic (eil),
  • Electronic devices,
  • Technology of devices for engineering
Information
Abstract
This work reports changes in the structural properties of sputtered GaAs layers deposited on Si (100) substrates induced by thermal annealing under different arsine atmospheres. The effects of the AsH3 partial pressure (P (AsH3) ) and of the annealing temperature in the GaAs layer properties were analyzed by means of in situ reflectance spectroscopy, in situ transient reflectance at 2.65 eV, X-ray diffraction and atomic force microscopy. The results obtained reveal a direct correlation between the AsH3 partial pressure and the evolution of the GaAs surface morphology as well as the annihilation of As clusters formed during the sputtering procedure.
International
Si
JCR
Si
Title
Journal of Materials Science-Materials in Electronics
ISBN
0957-4522
Impact factor JCR
1,966
Impact info
Volume
25
Journal number
1
From page
134
To page
139
Month
SIN MES
Ranking
Participants
  • Autor: Beatriz Galiana Blanco (UPM)
  • Autor: S. Silvestre
  • Autor: Carlos Algora Del Valle (UPM)
  • Autor: Ignacio Rey-Stolle Prado (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
S2i 2019 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)