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Descripción
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| This work reports changes in the structural properties of sputtered GaAs layers deposited on Si (100) substrates induced by thermal annealing under different arsine atmospheres. The effects of the AsH3 partial pressure (P (AsH3) ) and of the annealing temperature in the GaAs layer properties were analyzed by means of in situ reflectance spectroscopy, in situ transient reflectance at 2.65 eV, X-ray diffraction and atomic force microscopy. The results obtained reveal a direct correlation between the AsH3 partial pressure and the evolution of the GaAs surface morphology as well as the annihilation of As clusters formed during the sputtering procedure. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Journal of Materials Science-Materials in Electronics |
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ISSN
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0957-4522 |
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Factor de impacto JCR
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1,966 |
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Información de impacto
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Volumen
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25 |
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DOI
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Número de revista
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1 |
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Desde la página
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134 |
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Hasta la página
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139 |
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Mes
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SIN MES |
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Ranking
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