Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Highly conductive p ++ -AlGaAs/n ++ -GaInP tunnel junctions for ultra-high concentrator solar cells
Year:2014
Research Areas
  • Electric engineers, electronic and automatic (eil),
  • Solar cells,
  • Technology of devices for engineering
Information
Abstract
Tunnel junctions are key for developing multijunction solar cells (MJSC) for ultra-high concentration applications. We have developed a highly conductive, high bandgap p ?+?+?-AlGaAs/n ?+?+?-GaInP tunnel junction with a peak tunneling current density for as-grown and thermal annealed devices of 996?A/cm 2 and 235?A/cm 2, respectively. The J?V characteristics of the tunnel junction after thermal annealing, together with its behavior at MJSCs typical operation temperatures, indicate that this tunnel junction is a suitable candidate for ultra-high concentrator MJSC designs. The benefits of the optical transparency are also assessed for a lattice-matched GaInP/GaInAs/Ge triple junction solar cell, yielding a current density increase in the middle cell of 0.506?mA/cm 2 with respect to previous designs.
International
Si
JCR
Si
Title
Progress in Photovoltaics
ISBN
1062-7995
Impact factor JCR
9,696
Impact info
Volume
22
Journal number
4
From page
399
To page
404
Month
SIN MES
Ranking
Participants
  • Autor: Enrique Barrigon Montañes (UPM)
  • Autor: Ivan Garcia Vara (UPM)
  • Autor: Laura Barrutia Poncela (UPM)
  • Autor: Ignacio Rey-Stolle Prado (UPM)
  • Autor: Carlos Algora Del Valle (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)