Memorias de investigación
Artículos en revistas:
Highly conductive p++-AlGaAs/n++-GaInP tunnel junctions for operation up to 15,000 suns in concentrator solar cells
Año:2014
Áreas de investigación
  • Ingeniería eléctrica, electrónica y automática,
  • Células solares,
  • Tecnología de dispositivos para ingeniería eléctrica y electrónica
Datos
Descripción
In the last few decades there has been great interest in III-V multijunction solar cells (MJSC) for concentrator applications due to their promise to significantly reduce the cost of electricity. Being formed by series connection of several solar cells with different bandgaps, a key role in a MJSC structure is played by the tunnel junctions (TJ) aimed to implement such series connection. Essentially, tunnel junctions (tunnel diodes or Esaki diodes) are thin, heavily doped p?n junctions where quantum tunneling plays a key role as a conduction mechanism. Such devices were discovered by Nobel laureate Leo Esaki at the end of 1950. The key feature of tunnel junctions for their application in MJSC is that, as long as quantum tunneling is the dominant conduction mechanism, they exhibit a linear I?V dependence until the peak tunneling current (Jp) is reached. This initial ohmic region in the I?V curve is ideal for implementing low-loss interconnections between the subcells with different energy bandgaps that constitute a MJSC.
Internacional
Si
JCR del ISI
No
Título de la revista
SEMICONDUCTOR TODAY: Compound & Advanced Silicon
ISSN
1752-2935
Factor de impacto JCR
Información de impacto
Volumen
9
DOI
Número de revista
8
Desde la página
80
Hasta la página
81
Mes
SIN MES
Ranking
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Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Departamento: Electrónica Física
  • Centro o Instituto I+D+i: Instituto de Energía Solar