Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Effect of field damping layer on two step absorption of quantum dots solar cells
Year:2014
Research Areas
  • Solar cells,
  • Technology of devices for engineering
Information
Abstract
Multi-stacked InAs/AlGaAs quantum dot solar cells (QDSCs) introduced with field damping layers (FDL) which sustain the junction built-in potential have been studied. Without an external bias condition, the external quantum efficiency (EQE) of QD layers are reduced by introducing the thick FDL, because the carrier escape due to built-in electric field was suppressed. On the other hand, the photocurrent production due to two-step absorption is increased by the formation of flat-band QD structure for QDSC with thick FDL.
International
Si
Congress
6th World Conference on Photovoltaic Energy Conversion (WCPEC-6)
960
Place
Kyoto (Japón)
Reviewers
Si
ISBN/ISSN
CDP08UPM
Start Date
23/11/2014
End Date
27/11/2014
From page
123
To page
124
WCPEC-6 TECHNICAL DIGEST
Participants
  • Autor: Y. Shoji
  • Autor: R. Tamaki
  • Autor: Alejandro Datas Medina (UPM)
  • Autor: Antonio Marti Vega (UPM)
  • Autor: Antonio Luque Lopez (UPM)
  • Autor: Y. Okada
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Departamento: Electrónica Física
  • Centro o Instituto I+D+i: Instituto de Energía Solar
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