Descripción
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The realizationofhighefficiency quantumdotintermediatebandsolarcellsischallengingdue to thethermallyactivatedchargeescapingathightemperatures.Theenhancementinshort circuit currentofquantumdotsolarcellsislargelyunderminedbythevoltageloss.Inthis paper,InAs/GaAsquantumdotsolarcellswithdirectSidopinginthequantumdotsarestudied. The opencircuitvoltageisimprovedwithincreasingdopingconcentrationinthequantumdots. The recoveryofopencircuitvoltageaslargeas105mVismeasured.Thisvoltagerecoveryis attributed tosuppressedchargethermalescapingfromquantumdots.Thesuppressedthermal coupling issupportedbytheexternalquantumefficiency andphotoluminescencemeasure- ments. | |
Internacional
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Si |
JCR del ISI
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Si |
Título de la revista
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Nano Energy |
ISSN
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2211-2855 |
Factor de impacto JCR
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10,211 |
Información de impacto
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Volumen
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6 |
DOI
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Número de revista
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Desde la página
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159 |
Hasta la página
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166 |
Mes
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SIN MES |
Ranking
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