Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Component integration strategies in metamorphic 4-junction III-V concentrator solar cells
Year:2014
Research Areas
  • Semiconductors ii-vi, iii-v and iv-iv,
  • Solar cells
Information
Abstract
Progressing beyond 3-junction inverted-metamorphic multijunction solar cells grown on GaAs substrates, to 4-junction devices, requires the development of high quality metamorphic 0.7 eV GaInAs solar cells. Once accomplished, the integration of this subcell into a full, Monolithic, series connected, 4J-IMM structure demands the development of a metamorphic tunnel junction lattice matched to the 1eV GaInAs subcell. Moreover, the 0.7 eV junction adds about 2 hours of growth time to the structure, implying a heavier annealing of the subcells and tunnel junctions grown first. The final 4J structure is above 20 Pm thick, with about half of this thickness used by the metamorphic buffers required to change the lattice constant throughout the structure. Thinning of these buffers would help reduce the total thickness of the 4J structure to decrease its growth cost and the annealing time. These three topics: development of a metamorphic tunnel junction for the 4th junction, analysis of the annealing, and thinning of the structure, are tackled in this work. The results presented show the successful implementation of an antimonide-based tunnel junction for the 4th junction and of pathways to mitigate the impact of annealing and reduce the thickness of the metamorphic buffers.
International
Si
Congress
10th International Conference on Concentrator Photovoltaic Systems - CPV-10
960
Place
Albuquerque, NM (EEUU)
Reviewers
Si
ISBN/ISSN
978-0-7354-1253-8
10.1063/1.4897024
Start Date
07/04/2014
End Date
09/04/2014
From page
41
To page
44
AIP Conference Proceedings 1616
Participants
  • Autor: Ivan Garcia Vara (UPM)
  • Autor: Vincenzo Orlando (UPM)
  • Autor: Pilar Espinet González (UPM)
  • Autor: Neftali Nuñez Mendoza (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Departamento: Electrónica Física
  • Centro o Instituto I+D+i: Instituto de Energía Solar
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
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