Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Field-dependent photoluminescence of InAlN/GaN based HEMT structures
Year:2014
Research Areas
  • Electric engineers, electronic and automatic (eil),
  • Electronic devices
Information
Abstract
The optical properties of InAlN/GaN based HEMT structures were examined by field-dependent photoluminescence spectroscopy as a function of temperature. Samples grown on Si subtrate were investigated. On top of a thick GaN buffer layer, an InAlN barrier of 10 nm causes a two-dimensional electron gas (2DEG), which dominates PL spectra at low temperatures at energies slightly below the donor-bound exciton. Semi-transparent metal contacts were processed either directly on top of the structures or seperated by an additional high-k dielectric, serving as Schottky or MIS diodes, respectively. Free exciton recombinations of the GaN buffer were observed for higher temperatures and allow determination of the strain in the GaN layer. Due to sample structure PL measurements exhibit mostly GaN related features.
International
Si
Congress
DPG Spring Meeting
960
Place
Desden, Germany
Reviewers
Si
ISBN/ISSN
0000000000000
Start Date
30/03/2014
End Date
03/04/2014
From page
1
To page
2
DPG Spring Meeting
Participants
  • Autor: Fatima Romero Rojo (UPM)
  • Autor: Fernando Calle Gomez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Ingeniería Electrónica
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