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Memorias de investigación
Communications at congresses:
Growth and characterization of InGaN/GaN core-shell structures by molecular beam epitaxy
Year:2014
Research Areas
  • Physics - Semiconductors and band structure
Information
Abstract
Growth and characterization of InGaN/GaN core-shell structures by molecular beam epitaxy
International
Si
Congress
IWN 2014 International Workshop on Nitride Semiconductors
960
Place
Wroclaw (Polonia)
Reviewers
Si
ISBN/ISSN
0000000000000
Start Date
24/08/2014
End Date
25/08/2014
From page
157
To page
189
IWN 2014 International Workshop on Nitride Semiconductors
Participants
  • Autor: Steven Albert . (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
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