Memorias de investigación
Ponencias en congresos:
A built-in CMOS Total Ionization Dose smart sensor
Año:2014
Áreas de investigación
  • Circuitos electrónicos,
  • Diseño microelectrónico,
  • Diseño de circuitos integrados mixtos,
  • Dispositivos sensores
Datos
Descripción
Total Ionization Dose (TID) is traditionally measured by radiation sensitive FETs (RADFETs) that require a radiation hardened Analog-to-Digital Converter (ADC) stage. This work introduces a TID sensor based on a delay path whose propagation time is sensitive to the absorbed radiation. It presents the following advantages: it is a digital sensor able to be integrated in CMOS circuits and programmable systems such as FPGAs; it has a configurable sensitivity that allows to use this device for radiation doses ranging from very low to relatively high levels; its interface helps to integrate this sensor in a multidisciplinary sensor network; it is self-timed, hence it does not need a clock signal that can degrade its accuracy. The sensor has been prototyped in a 0.35?m technology, has an area of 0.047mm2, of which 22% is dedicated to measuring radiation, and an energy per conversion of 463pJ. Experimental irradiation tests have validated the correct response of the proposed TID sensor.
Internacional
Si
Nombre congreso
IEEE Sensors
Tipo de participación
960
Lugar del congreso
Valencia
Revisores
Si
ISBN o ISSN
978-1-4799-0161-6
DOI
10.1109/ICSENS.2014.6984935
Fecha inicio congreso
02/11/2014
Fecha fin congreso
05/11/2014
Desde la página
70
Hasta la página
73
Título de las actas
SENSORS, 2014 IEEE
Esta actividad pertenece a memorias de investigación
Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Laboratorio de Sistemas Integrados (LSI)
  • Departamento: Ingeniería Electrónica