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Memorias de investigación
Communications at congresses:
Four-injector variability modeling of FinFET predictive technology models
Year:2014
Research Areas
  • Nanoelectronics,
  • Modelate electric of integrate circuit
Information
Abstract
The usual way of modeling variability using threshold voltage shift and drain current amplification is becoming inaccurate as new sources of variability appear in sub-22nm devices. In this work we apply the four-injector approach for variability modeling to the simulation of SRAMs with predictive technology models from 20nm down to 7nm nodes. We show that the SRAMs, designed following ITRS roadmap, present stability metrics higher by at least 20% compared to a classical variability modeling approach. Speed estimation is also pessimistic, whereas leakage is underestimated if sub-threshold slope and DIBL mismatch and their correlations with threshold voltage are not considered.
International
Si
Congress
CMOS Variability (VARI), 2014 5th European Workshop on
960
Place
Palma de Mallorca
Reviewers
Si
ISBN/ISSN
978-1-4799-5399-8
10.1109/VARI.2014.6957075
Start Date
29/09/2014
End Date
01/10/2014
From page
1
To page
6
CMOS Variability (VARI), 2014 5th European Workshop on
Participants
  • Autor: Pablo Royer Del Barrio (UPM)
  • Autor: M. Luisa Lopez Vallejo (UPM)
  • Autor: Fernando Garcia Redondo (UPM)
  • Autor: Carlos Alberto Lopez Barrio (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Laboratorio de Sistemas Integrados (LSI)
  • Departamento: Ingeniería Electrónica
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